Abstract
Cu thin films sputter-coated on single crystals of silicon were implanted with 30 keV nitrogen ions under various doses from 1.9 × 1017 to 5.7 × 1017 ions/cm2. The prepared samples were subsequently annealed in nitrogen atmosphere. The grazing incidence X-ray diffraction analysis revealed that in addition to the crystalline copper nitride phase, copper azides were developed by nitrogen ion implantation. With an increase of the implantation dose to 2.3 × 1018 ions/cm2, much of the Cu film was transformed to the crystalline Cu3N phase. Furthermore, the effect of nitrogen ion implantation on Cu thin films under various doses was investigated. The structural properties, morphology and sheet resistance of samples were investigated by grazing incidence X-ray diffraction, atomic force microscopy, field emission scanning electron microscopy and four-point probe techniques, respectively. In addition, the dependence of resistivity of the implanted samples on the implantation dose as well as structural properties is discussed.
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