Abstract
The temperature dependence of the electrical resistivity of quasi-one-dimensional NbSe3 is investigated in the interval 78–550 K in the thermodynamic equilibrium and nonequilibrium states. At temperatures of 300–550 K one observes an exponential deviation from the linear dependence on account of the formation of thermodynamic equilibrium Se vacancies. The influence of intrinsic defects (vacancies) on the properties of NbSe3 at 78–300 K is investigated by the quenching method. For samples with excess vacancies an anomalously large deviation from the Matthiessen rule (up to 150%) is observed.
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