Abstract
The hole binding energy and pairing correlations are calculated in the three-band Hubbard model by using the constrained-path Monte Carlo (CPMC) method. In the physically relevant region, we investigated effects of CuO Coulomb repulsion V pd on these two properties. Simulations were performed on lattices of 2×2, 4×2 and 6×4 unit cells. For the 2×2 unit cell, the CPMC results are in good agreement with exact diagonalization results. For it we found that the hole binding energy clearly increases with the nearest-neighbor Coulomb repulsion V pd , but for larger systems it increases only slightly. For the extended s-wave channel, we found that the pairing correlations and vertex contributions increase slightly with an increase of V pd , while for the d x 2− y 2 -wave channel both tend to decrease.
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