Abstract

Nanocrystalline CdS:Cu thin films were prepared by chemical synthesis on glass at 70°C. X-ray diffraction (XRD), optical absorption (OA) and Raman measurements were carried out in order to characterize the material. From the XRD patterns it is concluded that grains of Cu-doped CdS films grow mainly in the zincblende cubic phase. The average radius (R), calculated by employing the Scherrer’s formula, is located in the range 2.7–8.7nm. The forbidden energy band gap (Eg) was estimated from the optical absorbance spectra and by means of the maximum of their first derivative. As effect of the doping the unit cell volume of CdS:Cu undergoes a shrinkage due to the compressive stress introduced by Cu atoms. Two effects overlap to change the Eg values: (a) the quantum confinement and (b) the internal stress (IS). IS is that which does not come from forces out to the volume of the material like the stress produced by substrates. Raman spectra indicate that the stress decreases when R decreases. On the other hand, the (111) interplanar distance and the unit cell volume (UCV) increases when R decreases, following the relationship UCV∝R−1. In the CdS:Cu stressed lattices, UCV increases when R decreases because in smaller particles the relaxation of the induced IS is more effective than in larger particles.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.