Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors

Abstract

The electronic structure of bilayer graphene under an external electric field is studied in terms of the interlayer stacking arrangements using the density functional theory combined with the effective screening medium method. The calculations showed that the accumulated carrier distribution strongly depended on the interlayer stacking arrangement. The carriers were highly concentrated on the topmost layer of twisted bilayer graphene, while carriers were also found in the second layer of bilayer graphene with the AA and AB interlayer arrangements. In addition to the carrier accumulation, ab initio molecular dynamics calculations also revealed that the interlayer Seebeck coefficient and thermal diffusivity in the bilayer graphene depended on the interlayer stacking arrangements.