Abstract
We report on enhanced efficiency of ultraviolet vertical light-emitting diodes (VLEDs) with interference between the reflective mirror and the multiple quantum well. The dimensions of the cavity are fixed at 30 nm for the p-AlGaN layer, while various thicknesses of p-GaN from 60 nm to 140 nm were used. The light output power of the VLED in constructive compared with destructive interference condition increased by 23.9% at 350 mA. These improvements could be attributed to the predominant constructive interference of vertical radiation due to an optical cavity with optimal p-GaN thickness.
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