Abstract
In this study, the drift-diffusion model incorporating mobile ions is adopted to study the effect of recombination at different interfaces on the hysteresis of the J-V curves in TiO2/MAPbI3/Spiro-OMeTAD solar cells. The simulation results show that the recombination at different interfaces has different effects on the hysteresis, especially the open circuit voltage. The surface recombination at the perovskite/hole transport layer interface has greater effects than that at the perovskite/electron transport layer interface. This is mainly due to the different permittivity of the electron and hole transport layer. Our simulation also investigated the influence of energy alignment of between perovskite and charge transport layer. We find that a better energy alignment can reduce the influence of interface recombination on the hysteresis.
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