Abstract
We measure the Kapitza conductances at Au:Si contacts from 100 to 296 K via time-domain thermoreflectance. Contacts are fabricated by evaporating Au films onto Si substrates. Prior to Au deposition, the Si substrates receive pretreatments in order to modify interfacial properties, i.e., bonding and structural disorder. Through the inclusion of a Ti adhesion layer and the removal of the native oxide, Kapitza conductance can be enhanced by a factor of four at 296 K. Furthermore, interfacial roughness is found to have a negligible effect, which we attribute to the already low conductances of poorly bonded Au:Si contacts.
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