Abstract

High-efficiency thin-film silicon solar cells require advanced textures at the front contacts for light management. In this contribution, the influence of the texture of various transparent conductive oxides (TCO) on the effectiveness of an intermediate reflector layer (IRL) in a-Si:H/μc-Si:H tandem solar cells is investigated. The employed front side TCOs include several types of sputter-etched ZnO:Al, LPCVD ZnO:B and APCVD SnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> :F. The topographies after different stages of the deposition process of the tandem solar cell, at the front TCO, after deposition of the amorphous top cell and after the deposition of the microcrystalline bottom cell, were characterized by atomic force microscopy at precisely the same spot. The external quantum efficiency of the fabricated solar cells were measured and successfully reproduced by a finite-difference time-domain method applying the measured topographies at each interface of the solar cell. With these simulations, the impact of structure type and feature size on the effectiveness of the IRL is investigated. The highest IRL effectiveness in a tandem solar cell was found for double-textured ZnO:Al. In this contribution, we study the interplay between interface textures and parasitic losses. Our findings are relevant for the design of topography for optimized IRL performance.

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