Abstract
Using coaxial impact collision ion scattering spectroscopy, we have investigated Sn thin film growth on Si(1 1 1)√3×√3-Sn and hydrogen-terminated Si(1 1 1) surfaces at room temperature. Sn formed crystalline film with β-Sn structure on Si(1 1 1)√3×√3-Sn surface, but on the hydrogen-terminated Si(1 1 1) surface, the epitaxial growth of Sn thin film was disrupted, and Sn grew as a polycrystalline film. The growth orientational relationship of the Sn film grown on Si(1 1 1)√3×√3-Sn surface was found to be Sn(1 0 0)〈0 1 0〉// Si(1 1 1)〈0 1 ̄ 1〉 . In the works, we found that interface structure plays a decisive role for the growth mode, crystallinity, and growth orientation of the growth of thin film.
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