Abstract
Current-voltage characteristics of the reversely biased Al/SiO2/n-Si MOS structure are calculated taking into account the nonuniformity of oxide thickness distribution over an area at a nominal thickness of 1–3 nm. It is known that the characteristics are S-shaped in a certain range of average SiO2 thickness, which suggests that a device is bistable. Holding and threshold voltage shifts, caused by statistical thickness variations, were predicted. In response to electrical stress, the root-mean-square deviation of the SiO2 thickness increases, which results in a shift of the threshold voltage to higher values. The calculations are complemented by experimental data.
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