Abstract
Calculations of the nonlinear properties in a d.c. biasing field of a flat paraelectric semiconducting capacitor possessing insulating electrode surface layers are presented. The thickness of electrode layers and the law of the change of resistivity near the electrode surfaces influence strongly the dependence upon C(E0), where C is the capacity of paraelectric condenser and E0 is the random d.c. field. The problem was solved completely analytically. Computer calculations were performed for frequencies much higher than the free charge relaxation frequency in semiconductors. BaTiO3 at temperatures of 5°, 15° and 25°C higher than the Curie point is chosen as a concrete paraelectric. The theoretical data obtained explain the discrepancy between the experimental relations, C(E0), and the theoretical ones, predicted by thermodynamic theory for the ferroelectrics with first-order phase transitions.
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