Abstract
We have investigated the magnetoresistive properties and thermal and electrical stability of a magnetic tunnel junction (MTJ) with a high-quality, ultra-thin Zr-alloyed Al oxide (ZrAl oxide) barrier of below 1.0 nm. We obtained the highest bias voltage and breakdown voltage of 711 mV and 1.75 V for a 1.6-nm-thick barrier. The resistance drops from 1850 Ω to 72 Ω as the ZrAl thickness decreases from 1.6 to 0.6 nm, respectively. A significant TMR (Tunneling Magneto-resistance) value of 17% and a junction resistance of 98 Ω were obtained for a MTJ with a ZrAl oxide barrier thickness of 0.8 nm.
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