Influence of initial charge and charge state fluctuations on high-energy ion ranges and track formation

Abstract

A model used for calculating the depth distribution of implanted atoms and the energy deposited into the electron and nuclear subsystems of solids is studied. The model is based on the transport equations and takes into account the initial charge and the fluctuations of charge states of high-energy ions ( E > 1 MeV/amu). The critical dose of 250 MeV Xe + ions necessary for the formation of deep amorphous layers in Si, GaAs and InP have been estimated. The process of the formation of continuous track regions in InP by 250 MeV Xe + ions is studied.