Abstract
Phosphorus profiles in germanium doped with gallium obtained within the formation of the first stage of a three-stage solar cell based on A3B5/Ge (Ga) have been studied. Secondary-ion mass spectroscopy has been applied to obtain profiles of phosphorus and gallium in germanium in flow of phosphine and in In0.01Ga0.99As/In0.56Ga0.44P/ Ge. It is observed that most of the phosphorus is supplied from In0.56Ga0.44P along with diffusion of gallium. The diffusion profiles of phosphorus in germanium have been calculated. It has been shown that diffusion of phosphorus from an In0.56Ga0.44P buffer layer, which is at the same time a source of gallium, depends on the coordinates, and, in order to describe this dependence, it is necessary to use mathematical models that take into account not only diffusion, but also the drift component of flow of phosphorus atoms.
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