Abstract

The paper presents the results of studies of the electrophysical properties of Si, doped Ni and Cu samples. It is revealed that a decrease in the mobility of charge carriers in the temperature range of 120÷320 K is of particular importance in increasing the resistivity of samples.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.