Abstract
We calculated the Seebeck coefficient of heavily-doped Si based on theoretical models of impurity-band formation, ionization-energy shift and conduction-band tailing. The impurity band was described by using two kinds of band-width definitions and it was found that the calculated Seebeck coefficient strongly depended on the impurity-band definition. In the high impurity-concentration region, the Seebeck coefficient decreased with increasing impurity concentration, and with a peak around 1×1019 cm-3. This result was qualitatively in good agreement with the experimental result, while there was quantitative disagreement between them.
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