Abstract
Optical damage has been induced in doped c-cut KTiOPO4 (KTP) crystals by low intensity (I0⩽0.1 W/cm2) continuous-wave illumination with ultraviolet (λ=364 nm) light. The presence of two growth sectors with different sensibility to optical damage has been observed and it is related to their different impurity concentrations. Impurities shift the optical absorption edge of KTP to lower energy and make the induced damage more stable at room temperature. The damage saturation depends on the ultraviolet power density and on the impurity concentration. It has also been observed that some impurities (W and others) change their valence due to ultraviolet irradiation. A dynamic model considering the excitation of electrons from donors and their release from traps is proposed. The model allows us to describe the main features of the optical damage and erasure kinetics.
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