Abstract
In this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation current, J0, as a function of implant fluence. Recombination through defects is identified as the cause of increased J0 compared with simulated values.For P-implanted samples J0n+ is shown to depend on annealing temperature for samples partially amorphised by a 1×1015 cm-2 P implantation at 40 keV. J0n+ of samples completely amorphised by a 3×1015 cm-2 phosphorus implant show much reduced dependence on annealing temperature. For boron implanted samples annealed at 1000°C, J0p+ was found to be below 25 fA.cm-2 for implant fluence less than 5×1014 cm-2 but to increase significantly for high fluence, where defects such as boron-interstitial clusters and dislocation loops are likely to dominate the observed recombination.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
