Abstract
The effects of hydrogen treatment on electrical properties of detector-grade cadmium manganese telluride (CdMnTe:In) crystals were investigated. The results showed that the resistivity of the crystals was improved from 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> Ω·cm after annealing. With the increase of annealing time, the resistivity first increased and then decreased. Hydrogen passivation reduced the carrier concentration and enhanced mobility. The disappearance of A <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> phonon mode of Te in Raman spectroscopy suggested that Te was decreased in crystal surface. The energy resolution and mobility-lifetime product of CdMnTe detectors were significantly improved. The CdMnTe:In crystal annealed for 30-h hydrogen treatment with greatest energy resolution and highest ( μτ) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> value had the best detector performance.
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