Abstract
In this paper, the properties of low pressure chemically vapor deposited tungsten silicide films processed from tungsten chlorides and silane are studied as a function of hydrogen initial partial pressure. By means of thermodynamic calculations, we have defined a priori the operating conditions leading to each silicide deposition. The corresponding films are grown in a cold‐wall reactor and characterized by x‐ray diffraction and scanning electron microscopy studies. Good agreement between theoretical and experimental results is obtained. The increase of initial hydrogen partial pressure has two possible consequences: a modification of the film composition for high partial pressure and a modification of the film growth rate for lower partial pressure.
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