Abstract

This article is concerned with the influence of both, the boron dopant concentration and hydrogen plasma treatment, on the electrochemical properties of polycrystalline diamond. The material characterizations, given by SIMS and XPS analysis, allowed us to understand the electrochemical behaviors ( I– V curves and capacitance–voltage measurements) of moderately and highly boron doped samples which have been hydrogenated or not, in 2 M H 2SO 4 medium containing the Ce 4+/Ce 3+ redox couple as an electrochemical probe. Moderately boron doped diamond electrodes are the most affected by hydrogen treatment, becoming insulating electrodes. For highly boron doped diamond electrodes, the charge transfer at the interface seems to be undisturbed by hydrogen treatment.

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