Influence of hydrogen doping on the electrical resistivity of partially crystalline Zr 76Ni 24 metallic glass

Abstract

The electrical resistivity of hydrogen doped partially crystalline (Zr 76Ni 24) 1− x H x metallic glasses has been measured in the temperature range from 1.5 up to 290 K for various dopant concentrations ( x = 0, 0.018, 0.024, 0.043, 0.054). The effect of disorder on the electrical resistivity in the partially crystalline Zr 76Ni 24 metallic glass has been studied. The partially crystalline Zr 76Ni 24 metallic glass has a high room-temperature resistivity (136 μΩ cm) and becomes superconducting below 3.49 K. The temperature coefficient of the electrical resistivity, (TCR), in the hydrogen doped partially crystalline Zr 76Ni 24 samples, shows a nonmonotonic behavior. Doping the samples with hydrogen increases disorder and produces a small positive anomaly in the resistivity below about 100 K leading to a maximum in the resistivity before curve resumes a monotonic decrease with increasing temperature. The temperature dependence of the electrical resistivity has been described by using theoretical models of weak-localization, electron–electron interaction and electron–phonon scattering in disordered three-dimensional conductors. In the partially crystalline Zr 76Ni 24 metallic glass, hydrogen reduces the electronic density of states at the Fermi level, N( E F), leading to a decrease in conductivity and suppression of the superconducting transition temperature, T c, for hydrogen level up to x = 0.043 whereas for x = 0.054, the T c and N( E F) are enhanced.