Influence of hot carrier transport on the transient response of an InGaAs/InAlAs metal-semiconductor Schottky diode structure

Abstract

The calculated transient characteristic of a heterostructure, rectifying contact is theoretically examined. It is found that hot carrier transport drastically affects the output terminal characteristics of the heterostructure Schottky contact and, hence, the workings of a blocking contact. This is of importance to the understanding of InGaAs MSM devices in particular, as well as any structure which contains a blocking contact in general.