Abstract
Luminescence spectra of RAlO3:Eu3+ (R = Gd, Tb, Lu, Gd0.6Lu0.4, or Y) single crystalline films grown by liquid phase epitaxy were measured under high pressure in a diamond anvil cell. Pressure application leads to lattice constant changes affecting the intensity ratio of 5D0 –>7F2 to 5D0 –>7F1 transitions of the Eu3+ ion (the so-called K-value). In all samples, except LuAP, the K-value was found to decrease with increasing pressure. In the LuAP:Eu/YAG epitaxial structure, in addition to Eu emission, a broad luminescence band was observed at ambient pressure. At high pressure another broadband luminescence appeared, the intensity of which was strongly enhanced at increased pressure. We assign the origin of those bands to defects. The pressure dependence of the luminescence intensity of the defect band correlates with the pressure changes in the K-value. It points to mutual interaction of the defects and dopants in this material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
