Abstract
Results of investigations into the electrophysical properties of p- and n-type Cd x Hg1– x Te heteroepitaxial layers grown by molecular beam and liquid phase epitaxy methods after exposure to high-power pulsed IR radiation of solid-state Nd3+:YAG and chemical DF lasers at wavelengths of 1.06 and 3.8–4.2 μm, respectively, are presented. It is demonstrated that the main types of defects resulting from pulsed irradiation are mercury vacancies that play the role of acceptors in this material. The spatial distribution of generated mercury vacancies depends on the intensity and wavelength of laser radiation: the defects generated by pulses of the Nd3+:YAG laser are concentrated only near the surface, whereas DF-laser radiation creates defects in the entire volume of the heteroepitaxial structures. It is established that irradiation with the Nd3+:YAG laser of the p-Cd x Hg1– x Te heteroepitaxial layers implanted by boron ions leads to the activation of implanted boron atoms as a result of melting and recrystallization of the irradiated surface layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
