Abstract
The field emission characteristics of ion-irradiated CVD diamond thin film deposited on silicon substrate has been studied. The diamond thin films, synthesized by hot filament chemical vapor deposition (HFCVD) method, were irradiated by high energy (100MeV) silver ion (107Ag+ with charge state 9) in the fluence range of 3×1011–1×1013ions/cm2. The CVD diamond films were characterized by Raman spectroscopy. The Raman spectra of irradiated samples clearly reveal structural damage due to ion irradiation, which is observed to be fluence dependent. However complete graphitization is not observed. The field emission current–voltage (I–V) characteristics were recorded in ‘diode’ configuration at base pressure ∼1×10−8mbar. Upon ion irradiation the field emission current is observed to increase with the reduction in the threshold voltage, required to draw 1μA current. The results indicate that ion irradiation leads to better emission characteristics and the structural damage caused by ion irradiation plays a significant role in emission behavior of CVD diamond films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
