Abstract
In this paper, Cu and 316L stainless steel with abundant crystal defects are constructed on bonding surfaces using high-current pulsed electron beam (HCPEB), and direct bonding is carried out in vacuum. The bonding temperature was varied as 800 °C and 850 °C, while the bonding pressure of 5 MPa and the bonding time of 40 min was maintained. Microstructure observations revealed that the initial coarse grains of the 316L was significantly changed to fine grains with abundant crystal defects after HCPEB irradiation. After diffusion bonding, the bonded area of the initial joint is not completely joined. Comparatively, the joints pretreated by HCPEB displayed a well-bonded interface. The diffusion coefficient of Cu at interface is significantly increased as well, which is attributed to the acceleration of atomic diffusion. Bonding strength indicates that the shear strength of the joints prepared via HCPEB pretreatment is much higher than the initial joints.
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