Abstract
The influence of a variable oxygen concentration in HfOx (x < 2) layers on the forming process and resistive switching of TaN/HfOx/Ni ReRAM cells is investigated. We demonstrate that resistive switching is possible only for those cells for which the Hf/O ratio in a HfOx layer corresponds to a narrow range for which x ≈ 1.8. The decrease of oxygen concentration in the oxide layer is shown to lead to, on the one hand, the decrease in the ION/IOFF ratio and, on the other hand, to the elimination of the forming process. The analysis of XPS spectra of HfOx films for a wide range of compositions revealed that the range of x, for which resistive switching is possible, corresponds to a maximum concentration of the Hf4O7 phase. The influence of HfOx phase composition on resistive switching is discussed.
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