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Abstract
Three components of lead hafnate titanate (PbHfxTi1–xO3, PHT) thin films have been fabricated by pulsed laser deposition (PLD) on the Pt (111)/Ti/SiO2/Si (100) substrates. In order to reduce the mismatch between the thin films and substrates, low temperature self-buffered layer is adopted. The effects of Hf content on structure and electric properties of PHT thin films have been investigated. The PHT near the MPB (x = 0.48) shows the highest remnant polarization (2Pr = 93.23 μC/cm2) and capacitance, even if its leakage current is a little worse than others. It should be noticed that the PHT ferroelectric films have a good performance after 2.15 × 1010 fatigue reversals, which indicates that PHT films as a promising material can be applied in ferromagnetic random access memory (FRAM).
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