Abstract
CuInS2 has been deposited onto the mesoporous TiO2 films by in sequence growth of InxS and CuyS via successive ionic layer absorption and reaction process (SILAR) and post-annealing in sulfur ambiance. The influence of the temperature of the heat treatment on the microstructure of the CuInS2 sensitized TiO2 electrodes and the photovoltaic performance of the solar cells were investigated. The crystallization degree of CuInS2 thin films increased with the increase of the heating temperature from 400 oC, 450 oC, 500 oC to 550 oC. With the increase of the heating temperature, the photoelectric conversion efficiency of the CuInS2 sensitized solar cells sharply increased from 0.13% (450 oC) to 0.84% (550 oC, Voc = 0.37 V, Jsc = 8.44 mA/cm2, FF = 0.27). This is attributed to the well crystallization of the CuInS2 nanoparticles and the decrease of the defects.
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