Abstract
The paper deals with experimental investigation of 420keV He+ dose dependence of silica (medium OH-group contents) luminescence. It was founded that experimental spectra were good fitted by two Voigt peaks centered in 2.7 and 1.9eV. The absorption dose growth influenced on silica ionoluminescence spectra due to increase of radiation defects. We compared the obtained results with 420keV hydrogen ion irradiation data for the same samples. It was shown that relative intensity of red band correlated with specific energy losses and effective charge of ions in silica. The theoretical simulation of helium ion implantation and intrinsic defect dynamics was performed. The dependence of ionoluminescence intensity on observation angle was measured.
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