Abstract
a-Si films were produced in an rf-GD from SiH 4, SiCl 4/H 2 and SiF 4/H 2 gas mixture with electrical and optical properties which qualify them as a basic material for solar cells. They proved to be doped with Cl and F respectively. The concentration of H and F in a-Si:H,F films, though below 1 %, was high enough to observe values of photoconductivity and photoluminescence comparable to those of a-Si:H and a-Si:H, Cl films. The decay time of photogenerated carriers observed by photoluminescence shows two components, a short one of 0,29 μs (0,23 μs) for a-Si:H,F (a-Si:H) and a longer one of 1,4 μs for a-Si:H,F and a-Si:H.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
