Abstract
InP layers grown on Si (001) were achieved by the two-step growth method using gas source molecular beam epitaxy. The effects of growth temperature of nucleation layer on InP/Si epitaxial growth were investigated systematically. Cross-section morphology, surface morphology and crystal quality were characterized by scanning electron microscope images, atomic force microscopy images, high-resolution X-ray diffraction (XRD), rocking curves and reciprocal space maps. The InP/Si interface and surface became smoother and the XRD peak intensity was stronger with the nucleation layer grown at 350 °C. The Results show that the growth temperature of InP nucleation layer can significantly affect the growth process of InP film, and the optimal temperature of InP nucleation layer is required to realize a high-quality wafer-level InP layers on Si (001).
Highlights
With the continuous development of integrated circuits manufacturing process technology, the size of semiconductor devices has been scaled down rapidly leading to the properties of silicon devices begin to approach its limitations
We investigate the influence of growth temperature of indium phosphide (InP) nucleation layer on the quality of InP film grown on Si (001) by gas-source molecular beam epitaxy (MBE) (GSMBE) using the two-step growth approach
The influences of the InP nucleation layer on the two-step InP layers have been investigated at different growth temperature by GSMBE, and the results are compared with the findings in lots of similar studies
Summary
With the continuous development of integrated circuits manufacturing process technology, the size of semiconductor devices has been scaled down rapidly leading to the properties of silicon devices begin to approach its limitations. Device performance and reliability inevitably suffer from the high-density defects in the hetero-epitaxial III–V materials [14] To overcome these problems, two main approaches are widely applied for the epitaxy of InP films on Si: one is known as selective area growth (SAG), where InP is grown selectively in the patterning nanometer scale trenches to trap defects at its sidewalls by the defect necking effect [15,16], and the other one is direct growth process by depositing InP directly on blanket Si wafers with metamorphic buffers [17,18,19]. The results indicate that the growth temperature of InP nucleation layer can significantly affect the InP/Si interface, InP surface morphology, and crystal quality These would be of value for the development of heterogeneous integration of InP with Si
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