Abstract
A study of the influence of growth interruption on the photoluminescence properties ofInGaAsGaAs strained quantum wells grown by metalorganic vapour phase epitaxy is presented. The effect of misorientation of the GaAs(001) substrate on the heterointerface properties is also considered. Growth interruption is shown to cause a considerable broadening of the photoluminescence line widths. The line-width broadening is related to changes in the interface morphologies upon growth interruption. For the misoriented substrates, these changes are illustrated by transmission electron microscopy. In particular, step bunching is shown to be enhanced during growth interruption on the misoriented surfaces. The results are discussed by considering the growth modes dominating on the different types of surfaces, as well the influence of strain on the surface morphology of the InGaAs layers.
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