Abstract
The gradient and oscillation amplitude of temperature are accurately measured in the melt and solid during silicon crystal growth by the Czochralski technique. Temperature oscillations near the growth interface are closely related to the growth of high quality silicon crystals. The oscillation amplitude decreases as the heater position is raised or the pulling rate is increased. The amplitude also decreases with a reduction of the crystal rotation rate but is independent of the crucible rotation rate. The amplitude depends on the melt temperature gradient near the growth interface and on the shape of the growth interface. These results should contribute to the fabrication technology of semiconductor substrates for very large scale integrated circuits (VLSI).
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