Abstract
This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001).
Highlights
MgO/6H-SiC(0001) Interface.Silicon carbide (SiC) is one of the most suitable semiconductors for high-power and frequency electronic devices due to its unique physical properties
Such devices include field-effect transistors (FETs) that are based on metal oxide semiconductor (MOS)
Graphite layers can be helpful in we report on a new approach to the MgO layers formation on 6H-SiC(0001) by a forming Ohmic contacts with SiC [9]
Summary
Silicon carbide (SiC) is one of the most suitable semiconductors for high-power and frequency electronic devices due to its unique physical properties. SiC has a wide band gap along with high values of electron mobility, thermal conductivity, and breakdown voltage. SiC is distinguished by a low intrinsic carrier concentration. SiC, compared to conventional semiconductors, is highly resistant to chemical and thermal degradation, allowing SiC-based electronic devices to operate under harsh conditions. Such devices include field-effect transistors (FETs) that are based on metal oxide semiconductor (MOS)
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