Abstract
The flexural strength and fracture toughness ( K IC) of reaction-bonded silicon carbide (RBSC) made from α-SiC grains of 0·2 and 23·65 μm with a free Si content of 16·5 and 26% and 16·5 and 24%, respectively, were measured from room temperature to 1370°C (1350°C in the case of K IC). The modulus of rupture (MOR) increased to 1300°C, followed by a sharp decrease to 1370°C. The K IC increased with temperature, from room temperature to 1350°C. The RBSC made from 0·2-μm α-SiC grains was superior in MOR K IC to that made from 23·65-μm α-SiC. The RBSCs with varying free Si contents were made by varying the pressure and composition during fabrication, and were tested for room temperature MOR and K IC, which decreased linearly with volume per cent of free Si.
Published Version
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