Abstract
We report how interface treatments affect electrical performance, including subthreshold characteristics, in solution-processed transparent metal oxide thin-film transistors (TFTs) with SiO2 and SiNx gate dielectrics. Ultra-violet (UV) ozone treatment and O2 plasma treatment are carried out as a surface treatment of the interface between a spin-coated zinc oxide (ZnO) layer and a gate dielectric. With the SiO2 dielectric, UV ozone treatment dominantly affects subthreshold characteristics, while O2 plasma treatment produces enhanced mobility and lower threshold voltage shift. With the SiNx dielectric, every electrical parameter including mobility, threshold voltage shift, and subthreshold characteristics is enhanced by 02 plasma treatment. Our experimental results demonstrate that interface engineering treatments variously influence the electrical performance in solution-processed ZnO TFTs.
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