Abstract
The influence of methane and hydrogen concentration as well as temperature of synthesis on the number of layers, area of coverage, and quality of graphene formed by chemical vapor deposition on copper is studied in this paper. It is shown that methane concentration primarily affects the sample coverage area. The temperature determines the number of graphene layers and the defect rate of graphene planes. The influence of hydrogen concentration is complex: low hydrogen concentrations are insufficient to induce efficient decomposition of methane on the copper surface; high concentrations of hydrogen limit nucleation of graphene layers and the formed graphene structures are subject to etching.
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