Abstract
The results of measurements of the characteristics of the ionization-type semiconductor photographic system with a gas discharge gap on both sides of a semiconducting CaAs:Cr plate are presented. Characteristics were measured under fixed pressure in the interval 600-60 Ton. As a result of this investigation one can see that it is possible to choose optimum conditions for a photographic ionization system filled by inert gases. Using this gas medium sohvs the problem of retaining semiconductor surface and change of the glow spectrum of gas. Means of increasing the sensitivity and improving the working characteristics are proposed.
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