Abstract
AbstractThis study achieved catalytic growth of gallium nitride nanowires (GaN‐NWs) and indium gallium nitride nanowires (InxGa1‐xN‐NWs) by the horizontal furnace chemical vapour deposition (HF‐CVD) method at the temperature of 900 °C and 550 °C, respectively. The morphologies and structures of III‐nitride nanowires depended on the gas flow rates were studied. Comparing the growth mechanisms of GaN‐NWs and InxGa1‐xN‐NWs, the vapour‐solid (VS) mechanism is dominant in GaN nanowires, except with a low ammonium flow rate, and the vapour‐liquid‐solid (VLS) mechanism is dominant in InxGa1‐xN nanowires. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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