Abstract

Silicon carbide (SiC) was synthesized from compacted pellet composed of Si powders and amorphous carbon powders through heating in solar furnace under controlled atmosphere (Ar or N2). Under irradiation of the solar energy flux 1350kW/m2 (ca. 1650°C in terms of measured temperature) for 30min, Si was completely converted to SiC in Ar atmosphere while the conversion was incomplete in N2.

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