Influence of GaN substrate crystallographic quality on the intensity of AlGaN epitaxial layer X‐ray diffraction peaks

Abstract

In the case of nearly perfect semiconductor layers (as AlGaAs on GaAs), the experimental data of X‐ray Diffraction are well simulated using the Dynamical Theory of X‐ray Diffraction. In the case of AlGaN and InGaN layers, intensity of their XRD peaks depend very strongly on the crystallographic quality of not only the layers, but also the substrates. In the paper, we show differences in XRD peak intensities for the AlGaN layers on GaN of the same thickness and Al‐content, but of different dislocation density.