Abstract
ABSTRACTThe carrier transport in uniaxial strained Si N channel metalvn oxide semiconductor field effect transistor (NMOSFET) irradiated by gamma rays is analyzed. Based on the total dose irradiation effect, an analytical model of two-dimensional sub-threshold current for differential capacitance of uniaxial strained Si Nano NMOSFET is established. Based on this model, numerical calculation is carried out by MATLAB. The influence of geometric parameters and total dose on differential capacitance is simulated. Meanwhile, the simulation results match the experiment result very well, which validates the accuracy of the model. Therefore, the model provides a good reference for the irradiation reliability of uniaxial strained Si nano NMOSFET and the application of strained integrated circuits.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
