Abstract
Abstract The effect of y-irradiation on the electrical and iecombination properties of Pt-nn+GaAs Schottky diodes, pGe-nn+GaAs heterodiodes and p+nn+GaAs diffusion diodes was studied foi doses between 106 and 2 x lop R. It was shown tha. the middle doses of irradiation led to an increase in the diffusion length of the minority carriers and in the efficiency of the IMPATT diodes.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
