Abstract

Abstract Different dilute Al-Ge and Al-Ga alloys, of Ge and Ga from 200 to 20,000 ppm, have been irradiated in the reactor at helium temperature. The total neutron dose was 1.5 × 1018 n/cm2. The recovery curves of electrical resistivity of the Al-Ga alloys are similar to the Al-Ge alloys. When the concentration of Ge and Ga increases, the high temperature part of Stage I (ID and IE) decreases. This decrease should be associated with the trapping of the mobile interstitials by foreign atoms. Stage II is also modified by the Ge and Ga additions. In the substage above 100°K, which does not exist in pure aluminum, several new peaks appear which can be attributed to the dissociation of interstitial impurity complexes. Stage III is represented as a complex structure on the high temperature side, in the most concentrated alloys.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.