Influence of GaAsSb structural properties on the optical properties of InAs/GaAsSb quantum dots

Abstract

The optical properties of InAs quantum dots with GaAsSb buffer, capping and cladding layers of different alloy compositions are studied by photoluminescence techniques. Fully strained GaAsSb layers show that the inclusion of a buffer layer gives a blue-shift to quantum dot emission, while for quantum dots capped with GaAsSb a clear red-shift is seen. Power-dependent photoluminescence suggests a transition from type-I to type-II can be achieved by GaAsSb at Sb composition between 11–13%, while the transition for the GaAsSb cladding layer occurs at around 11%. At low Sb composition, good crystal quality and energy barrier are detected by temperature-dependent photoluminescence, while high-level dislocation and defects exist under high antimony content, as evidenced by X-Ray Diffraction and Transmission Electron Microscopy.