Abstract
In this present work, the copper oxide (CuO) thin films were deposited by dc reactive magnetron sputtering on silicon (100) wafer. The microstructural evolution of the CuO thin films were investigated as a function of film thickness at the range of 150 to 600 nm by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The optical transmittance was measured by UV-VIS-NIR spectrophotometer. The sheet resistances of the CuO thin films were characterized by four-point-probe measurement. The results indicated that the obtained films were polycrystalline. The surface roughness of the CuO thin film showed an increasing with film thickness. In addition, the relationship between film thickness, morphology and electrical property were discussed in this paper.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
