Abstract
This paper describes the influence of film qualities of boron doped hydrogenated amorphous silicon carbide (a-Si 1− x C x :H) on the 1 f noise in use as semiconductor thermistors. The dependencies of rf-power, CH 4 SiH 4 and B 2H 6 SiH 4 gas flow ratio are confirmed experimentally. As the rf-power increased, 1 f noise dramatically decreased. Enhancing decomposition of CH 4 gas results in reducing the amount of SiCH 3 and CH n bonds which were found to be the key factors to reduce noise. As the B 2H 6 SiH 4 gas flow ratio increased, carrier density of the film also increased and the increasing rate of 1 f noise at low temperature was dramatically reduced. By optimizing deposition parameters, we have successfully fabricated superior thermistors with low noise and high sensitivity characteristics.
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